Multilayer buffer structure including II-VI compounds on a silicon substrate
US5449927A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound epitaxially contacting the silicon substrate (22) and a layer (30) of a CdZnTe compound overlying the ZnSeTe compound layer (24). The ZnSeTe compound layer (24) may be provided as a single graded layer having a composition of ZnSe adjacent to the silicon and a composition of ZnTe remote from the silicon, or as two distinct sublayers with a ZnSe sublayer (26) adjacent to the silicon substrate (22) and a ZnTe sublayer (28) remote from the silicon substrate (22).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.