Ferroelectric thin film element
US5449933A · kind A · utility
8Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1993 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Mar 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni--Cr--Al system oriented in the direction (100), a ferroelectric thin film 5 composed of a PbTiO.sub.3 thin film oriented in the direction (111), and an upper electrode 6 in this order on a substrate composed of (100) silicon 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.