MOS-controlled power semiconductor component
US5449938A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1994 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Feb 8, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor component having integrated protection against electrostatic destruction is published. Such a semiconductor component (1) comprises a semiconductor substrate (10) having at least one MOS structure whose gate (7) is arranged insulated from the semiconductor substrate (10). Such structures are susceptible to destruction by a dielectric breakdown of the insulation layer, caused by electrostatic charging. According to the invention, this insulating layer between-the gate electrode (3) and the main electrode (2) is now replaced by a semi-insulating layer (9) so that a limited current flow becomes possible between the gate (7) and the main electrode (2) and it is no longer possible for any potential difference to build up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.