Semiconductor infrared image pickup device and method of fabricating the same
US5449944A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1994 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Dec 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1843
Abstract
A semiconductor image pickup device comprises a photo-sensing substrate and a signal processing substrate, wherein the photo-sensing substrate further comprises a plurality of detector elements, and the signal processing substrate comprises a plurality of input diodes, each detector element being operatively connected to the respective input diode. The detector elements are isolated and light shielded from each other and further from the signal processing substrate by a light shield layer, and each detector element has an input port for incident rays on an input side of the photo-sensing substrate and has a surface region on the opposite side for outputting a signal to the input diode. The light shield layer of the invention comprises an insulation multilayer and a metal layer laminated in this order from the input side of the incident rays. The embodiments utilize a silicon nitride layer and zinc sulphide layer as the insulation multilayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.