Semiconductor device provided with isolation region
US5449946A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1994 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Mar 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided in which a contact is very simply formed on conductive material for capacitive coupling prevention. Two silicon substrates are bonded through a silicon oxide film. And a trench extending to the silicon oxide film is formed in one of silicon substrates so as to isolate between plural circuit elements from each other, and islands for circuit element formation are compartmently formed by the trench. A silicon oxide film is formed on an outer periphery portion of the islands for circuit element formation. Furthermore, an island for capacitive coupling prevention is formed by the silicon substrate between the islands for circuit element formation and is applied thereto to be maintained in an electric potential of constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.