Monolithic integrated semiconductor device

US5449949A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Hartmut Michel
• Peter Flohrs · Reutlingen, DE
• Alfred Goerlach · Tübingen, DE

Key dates

• Filing date: Jun 11, 1993
• Grant date: Sep 12, 1995
• Expiry date: Jun 11, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/642

Abstract

A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region between a highly doped zone (5) and the weakly doped substrate (1). An adjacent highly doped zone (4) is not covered by the cover electrode (D1). By connecting the metal cover electrode (D1) to the pickup (12) for a voltage divider (R1, R2), a breakdown voltage can be adjusted that is higher than the sum of the depletion breakdown voltage and the enhancement breakdown voltage.