Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same
US5450437A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1993 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Dec 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along a cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.