Semiconductor laser with semi-insulating current blocking layers
US5452315A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1994 |
| Grant date | Sep 19, 1995 |
| Priority date | — |
| Expiry date | Jun 8, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a semiconductor substrate of a first conductivity type having opposite front and rear surfaces, a double-heterojunction structure including a first conductivity type lower cladding layer, an undoped active layer, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, successively disposed on the front surface of the semiconductor substrate wherein the double-heterojunction structure is a mesa having opposite sides, and a light and current confinement structure disposed on the opposite sides of the mesa for confining laser light and laser driving current within the mesa. The confinement structure includes a first conductivity type mesa embedding layer, a second conductivity type mesa embedding layer, and a semi-insulating InP layer which are successively disposed on the semiconductor substrate contacting the opposite sides of the mesa. In this structure, since the semi-insulating semiconductor layer is not in contact with the active layer, unfavorable diffusion of impurities contained in the semi-insulating layer into the active layer is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.