Photoelectric conversion device with improved back reflection layer
US5453135A · kind A · utility
29Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1993 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Dec 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photoelectric conversion device comprising at least a metal layer, a transparent conductive layer disposed on said metal layer, and an active semiconductor layer disposed on said transparent conductive layer, characterized in that said transparent conductive layer comprises a layer having an uneven surface which is composed of a zinc oxide material having an X-ray diffraction pattern in which (a) the peak intensity of the (2,0,0) planes of ZnO.sub.2 is 1/200 or less of (b) the peak intensity of the (0,0,2) planes of ZnO and (c) the peak intensity of the (1,0,1) planes of Zn is 1/200 or less of the peak intensity (b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.