Method for fabricating quantum wire laser diode
US5453398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1994 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Nov 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a fabricating method of a quantum wire laser diode, comprising the steps of preparing a GaAs substrate; sequentially forming n-type epitaxial layers and a first photoresist layer on the GaAs substrate; removing a portion of the intrinsic GaAs layer by using a first etching solution, and then removing the photoresist layer; wet-etching away a portion of the intrinsic AlAs layer in the vicinity of the opening by using a second etching solution; growing a quantum structure in the molecular beam epitaxy apparatus to form a multiple quantum well on the intrinsic GaAs layer and form a quantum wire on the n-type energy band slope layer through the opening; removing the quantum well, the intrinsic GaAs layer and the intrinsic AlAs layer simultaneously by using a third etching solution; sequentially forming a p-type energy band slope layer, a p-type cladding layer and a p.sup.+ -GaAs layer, on the n-type energy band slope layer and the quantum wire, and forming a second photoresist layer having a predetermined pattern on the p.sup.+ -GaAs layer; removing the layers laminated on the n-type resistive contact layer using the second photoresist layer patterned thus as an etching ma…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.