Method of making light emitting diode bars and arrays
US5453405A · kind A · utility
121Cited by
16References
59Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1993 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Dec 9, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.