Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5455430A · kind A · utility
50Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1992 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Jul 30, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.