Sputtering targets of high-purity aluminum or alloy thereof
US5456815A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1994 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Dec 27, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering target of a high-purity Al or Al alloy having (1) a target crystal structure as a recrystallization structure and average grain diameters in various portions of 500 .mu.m or less, with dispersions within .+-.15%, and (2) a {200} crystalline orientation content ratio on the sputtering surface of at least 0.35 in various portions of the target, with dispersions within .+-.15%, said {200} crystalline orientation content ratio being defined by the following formula: ##EQU1## where I.sub.{200}, I.sub.{111}, I.sub.{220} and I.sub.{311} are peak strengths for (200), (111), (220) and (311) crystal planes, respectively, as obtained X-ray diffraction method. Simultaneous realization of (1)+(2) is desirable. For these purposes, uniform warm or cold working to a desired final geometry below the recrystallization temperature must be followed by uniform heat treatment throughout the target at the recrystallization temperature of the material to finish the recrystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.