Method of manufacturing photo-mask and photo-mask manufactured thereby
US5457006A · kind A · utility
7Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1991 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Mar 29, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo-mask and a method of manufacturing a photo-mask, which includes the steps of applying a resist film onto a substrate of quartz, glass and the like, subjecting the resist film to light exposure and development to form a fine resist pattern, etching the mask substrate covered by the fine resist pattern, causing a non-light transmitting thin film of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film on the resist pattern together with the resist film, thereby to form the photo-mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.