Method for fabricating a capacitor for a dynamic random access memory cell
US5457063A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 20, 1994 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Apr 20, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/043
Abstract
A method for fabricating a capacitor of a dynamic random access memory cell having increased surface area and capacitance of its storage electrode which includes a plurality of vertical protrusions is disclosed. The capacitor includes an electrode plate electrically connected to a field effect transistor formed on a semiconductor substrate through interlayer insulating layers, a plurality of protrusions formed on the electrode plate, side walls respectively formed at side edges of the electrode plate, and a dielectric film and a plate electrode sequentially formed over the entire exposed surfaces of the electrode plate, the protrusions and the side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.