Tin and/or lead contacts to P-type HgCdTe
US5457330A · kind A · utility
6Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1993 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Mar 3, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 .ANG. in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg.sub.1-x Cd.sub.x Te, other elements exhibiting group II and group VI chemical behavior and properties may be used. A cap layer (30) is deposited over film (24), followed by insulating layer 32. Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.