Low-noise gain-mode impurity band conduction detector design
US5457337A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1994 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Oct 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/10
Abstract
The photo-sensitive detector region of conventional Impurity Band Conduction (IBC) detector (also known as a Blocked Impurity Band [BIB] detector) is divided into a wide detection (or collection) region and a narrow gain region by means of tailoring the doping profile. The narrow gain region is that portion of the photo-sensitive detector region closest to the blocking layer, where the electric field is the largest, whose As concentration is made smaller (in the range of 2 to 5.times.10.sup.17 cm.sup.-3) to increase the impact ionization coefficient by decreasing the electron scattering. The wide detection region is that portion of the photo-sensitive detector region furthest from the blocking layer, where the electric field is smallest and the As concentration is larger (in the range of 5 to 8.times.10.sup.17 cm.sup.-3) to decrease the impact ionization coefficient by increasing the electron scattering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.