X-ray wave diffraction optics constructed by atomic layer epitaxy
US5458084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Dec 9, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/061
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
X-ray wave diffraction devices are constructed using atomic layer epetaxy. A crystalline substrate is prepared with one or more surface areas on which multiple pairs of layers of material are to be deposited. These layers are then formed by atomic layer epetaxy on the surface areas of the substrate, one on top of another, with the material of each layer of each pair being selected to have a different index of refraction from that of the material of the other layer of each pair. The layers are formed so that the thickness of each layer of a pair is substantially the same as that of the corresponding layer of every other pair and so that x-ray waves impinging on the layers may be reflected therefrom. Layer pairs having a thickness of about 20 angstroms or less are formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.