Process for the production of electroluminescent silicon structures

US5458735A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Axel Richter · Hersbruck, DE
• Peter Steiner · Edison, US
• Walter Lang · Rochester, US

Key dates

• Filing date: Feb 7, 1994
• Grant date: Oct 17, 1995
• Expiry date: Feb 7, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/96
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for the production of electroluminescent silicon structures, including: placing a silicon wafer in an acid bath; anodizing the silicon wafer in the acid bath using the apparatus of FIG. 2; illuminating the anode side of the silicon wafer during at least part of the time the silicon wafer is being placed in the acid bath and is being anodized; causing at least some areas of the monocrystalline silicon of the silicon wafer to be converted into a microporous silicon layer; and forming two contacts by means of which a voltage can be applied to the microporous silicon layer.