Method of producing a self-suporting thick-film structure
US5458911A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Dec 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/092
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for producing a self-supporting thick-film structure on a substrate above a recess defined in the substrate, includes applying an active layer onto an auxiliary substrate; positioning the active layer in contact with the substrate and above the recess defined in the substrate; firing the substrate to bond the active layer thereto; and separating the active layer bonded to the substrate from the auxiliary substrate, wherein the active layer has a thermal expansion coefficient which is less than that of the substrate so that a self-supporting thick-film structure is formed above the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.