Method for selectively growing aluminum-containing layers
US5459097A · kind A · utility
1Cited by
0References
6Claims
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Key dates
| Filing date | Oct 7, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Oct 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the invention, aluminum-containing layers are grown by molecular beam processes using as an arsenic precursor phenylarsine (PhAs). Because PhAs is more reactive than arsine and less reactive than arsenic, it decomposes selectively on III-V surfaces but not on mask materials. Thus in contrast to conventional processes, growth using PhAs permits selective growth on unmasked gallium arsenide surfaces but inhibits growth on typical mask materials such as silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.