Maskless laser writing of microscopic metallic interconnects
US5459098A · kind A · utility
42Cited by
10References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 19, 1992 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Oct 19, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal pattern on a substrate. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.