Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
US5459108A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Jul 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O.sub.3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH.sub.3).sub.3 SiN(CH.sub.3)Si(CH.sub.3).sub.3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH.sub.3)C(OSi(CH.sub.3).sub.3)(NSi(CH.sub.3).sub.3)) or tridimethylamino silane (chemical formula (CH.sub.3).sub.2 N).sub.3 SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si--N bond in its composition and O.sub.3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilaza…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.