Semiconductor memory device having memory cells with enhanced capacitor capacity
US5459685A · kind A · utility
1Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1994 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Mar 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
A semiconductor memory device includes a dielectric layer formed on a conductive thin film layer constituting a shield electrode for effecting element separation in a field area, the dielectric layer connected to a dielectric layer of a capacitor with a lower electrode having part thereof opposite to part of the shield electrode through the dielectric layer, and has an increase in electrode area of a memory cell to be able to attain the high level of integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.