Process for forming a phosphor
US5460980A · kind A · utility
4Cited by
13References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Oct 24, 1995 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2004/12
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
The growth of a phosphor layer deposited on a patterned substrate containing a multiplicity of recessed ridges of triangular cross section can be controlled by tailoring the geometry of the recessed ridge structures. During the deposition process, little or no phosphor deposition occurs on the recessed ridge structures, and cracks are formed which separate the otherwise uniformly growing phosphor which is present in other regions of the patterned substrate where more substantial phosphor deposition occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.