Semiconductor substrate structure for producing two isolated circuits on a same substrate
US5461253A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1994 |
| Grant date | Oct 24, 1995 |
| Priority date | — |
| Expiry date | Jul 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor circuit structure including a semiconductor substrate portion and at least one region provided on one main surface thereof insulatedly isolated from other regions provided on the same surface, by burying means made of an oxide film, the burying means including a bottom flat portion and at least one side wall portion provided at least in the vicinity of an edge portion of and integrally formed with the bottom flat portion, thereby a semiconductor circuit structure provided with a plurality of insulatedly isolated regions on a main surface thereof and having a high withstand voltage can be obtained in a short production process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.