Storage capacitors using high dielectric constant materials
US5461536A · kind A · utility
9Cited by
2References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 29, 1994 |
| Grant date | Oct 24, 1995 |
| Priority date | — |
| Expiry date | Nov 29, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.