Patent · US Expired

Method for pulling single crystals

US5462011A · kind A · utility

11Cited by
6References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 1994
Grant dateOct 31, 1995
Priority date
Expiry dateMay 25, 2014

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1068
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method and apparatus for pulling single crystals from a melt of semicontor material, in which a monocrystalline seed crystal grows to form a single crystal, the seed crystal being dipped into the melt and raised in a controlled manner in the vertical direction with respect to the melt, while the melt forms a molten pool which is held on a support body only by the surface tension and by electromagnetic forces due to an induction coil. This method includes recharging the melt with semiconductor material in solid or liquid form during the growth of the single crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.