Method for pulling single crystals
US5462011A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1994 |
| Grant date | Oct 31, 1995 |
| Priority date | — |
| Expiry date | May 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for pulling single crystals from a melt of semicontor material, in which a monocrystalline seed crystal grows to form a single crystal, the seed crystal being dipped into the melt and raised in a controlled manner in the vertical direction with respect to the melt, while the melt forms a molten pool which is held on a support body only by the surface tension and by electromagnetic forces due to an induction coil. This method includes recharging the melt with semiconductor material in solid or liquid form during the growth of the single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.