Fabrication of filamentary field-emission device, including self-aligned gate
US5462467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1993 |
| Grant date | Oct 31, 1995 |
| Priority date | — |
| Expiry date | Sep 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/298
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer (24A) that overlies a lower conductive region (22) situated over insulating material of a supporting substrate (20). Electron-emissive filaments (30) occupy pores (28) extending through the porous layer. A conductive gate layer (34A) through which openings (36) extend at locations centered on the filaments typically overlies the porous layer. Cavities (38) are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments. In fabricating the structure, the pores are preferably formed by etching charged-particle tracks. Electrochemical deposition is employed to selectively create the filaments in the pores. Self-alignment of the gate openings to the filaments is achieved with charged-particle track etching and/or further electrochemical processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.