Method of manufacturing thin film transistors in a liquid crystal display apparatus
US5462885A · kind A · utility
11Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1994 |
| Grant date | Oct 31, 1995 |
| Priority date | — |
| Expiry date | Dec 30, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.