Process for manufacturing a semiconductor device using NH.sub.4 OH-H.sub.2 O.sub.2 based etchant for Ti based thin film
US5462891A · kind A · utility
9Cited by
7References
2Claims
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Key dates
| Filing date | Apr 22, 1994 |
| Grant date | Oct 31, 1995 |
| Priority date | — |
| Expiry date | Apr 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
If a resist pattern is formed on a titanium-based thin film, and a titanium-based thin film is etched with an NH.sub.4 OH--H.sub.2 O.sub.2 --H.sub.2 O-based etching solution with an ammonia concentration of 3% or less, irregularities on pattern faces due to etching can be eliminated, and the amount of side etching at the titanium thin film below the resist pattern ends can be suppressed to 1 .mu.m or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.