Integrated semiconductor circuit protected against high voltage breakdown
US5463239A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1994 |
| Grant date | Oct 31, 1995 |
| Priority date | — |
| Expiry date | Jun 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A circuit integrated on a semiconductor substrate in order to drive a load, (for example, a VFD) by means of a comparatively high voltage (for example, 35 V), includes a first and a second supply voltage terminal for application of the comparatively high voltage, an input, and a load output for connection of a load to be driven by the circuit. A switching transistor, a protection transistor and a sub-circuit are a part of the integrated circuit. The switching transistor and the protection transistor are connected in series with the gate of the switching transistor connected to the input. The source of the switching transistor is connected to a first supply voltage terminal, and the drain of the protection transistor supplies a signal for the sub-circuit during operation. The output of the sub-circuit is connected to the load output and the gate of the protection transistor receives a fixed voltage. The protection transistor is constructed so that it limits the voltage at the drain of the switching transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.