Method of and apparatus for epitaxially growing chemical compound crystal
US5463977A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 15, 1993 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Jul 15, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.