Method for taper etching metal
US5464500A · kind A · utility
23Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1994 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Aug 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/4846
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a tappered first metal wiring layer is described incorporating a substrate, a second metal layer formed as the upper layer on the first metal layer, a third metal layer having a diffusion coefficient lower than the diffusion coefficients of the above two metal layers formed between the first and the second metal layers, a resist pattern formed on the second metal layer, wherein the first metal layer is etched using the patterns of the second and the third metal layers and the resist pattern as etching masks to form a tapered cross-sectional pattern of the first metal wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.