Oxynitride-dioxide composite gate dielectric process for MOS manufacture
US5464783A · kind A · utility
92Cited by
17References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 2, 1995 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Feb 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making gate dielectrics for MOS devices includes first forming a silicon oxynitride layer, and then forming a silicon dioxide layer that underlies the oxynitride layer. The oxynitride layer functions as a membrane for controlled diffusion of oxygen to the oxidation region of the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.