Method of making glazed AlN substrate with an Al.sub.2 O.sub.3 -SiO.sub.2 interfacial layer
US5466488A · kind A · utility
14Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1994 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Feb 8, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B41/89
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A glazed AlN substrate includes: a sintered AlN body, a surface oxidized layer formed on the sintered AlN body, an Al.sub.2 O.sub.3 --SiO.sub.2 layer formed on top of the intermediate surface oxidized layer, and a glass layer formed on top of the Al.sub.2 O.sub.3 --SiO.sub.2 layer. In one embodiment, an additional SiO.sub.2 layer is interposed between the glass layer and the Al.sub.2 O.sub.3 --SiO.sub.2 layer. A method of producing the AlN substrate is also disclosed that permits firing of the glass layer at high temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.