Method for producing semiconductor articles
US5466631A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1995 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Feb 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.