Monolithic silicon opto-coupler using enhanced silicon based LEDS
US5466948A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/255
Abstract
A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light emitting diode having enhanced light emitting efficiency is formed on one of said islands. The enhanced light emitting diode is either of the type having the surface of said p-type silicon island being electrochemically etched to provide a porous silicon layer, having carbon implanted in damaged silicon, or having an amorphous silicon-carbide layer. A silicon diode detector is formed on the other island(s) and a reflective layer is disposed over the light-emitting diode and the detectors for coupling light generated in the light emitting diode to the silicon diode detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.