Field effect transistor having an improved transistor characteristic

US5466955A · kind A · utility

Assignee

• NEC CORPORATION · JP

Inventors

• Kenichi Maruhashi · Tokyo, JP
• Kazuhiko Onda · Saitama, JP
• Masaaki Kuzuhara · Tokyo, JP

Key dates

• Filing date: Jan 30, 1995
• Grant date: Nov 14, 1995
• Expiry date: Jan 30, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4732

Abstract

A field effect transistor (20) comprises a first semiconductor layer (24) and a second semiconductor layer (25) formed on the first semiconductor layer. The first semiconductor layer is an undoped layer and is composed of InGaAs. The second semiconductor layer is composed of InAlGaP and is a doped layer in which an n-type impurity is doped. A heterojunction structure is formed between the first semiconductor layer and the second semiconductor layer.