Semiconductor device for influencing the breakdown voltage of transistors

US5466959A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Alfred Goerlach · Tübingen, DE
• Hartmut Michel
• Anton Mindl · Hildesheim, DE

Key dates

• Filing date: Dec 5, 1994
• Grant date: Nov 14, 1995
• Expiry date: Dec 5, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60

Abstract

A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the same by an oxide layer. The surface electrode is at a potential, as determined by a voltage divider, between the potentials of the base and collector of the transistor. The surface electrode includes two electrode plates insulated from one another, with the first electrode plate extending over a junction between a highly doped n.sup.+ collector region and a lightly doped n.sup.- collector region, and a junction between the lightly doped n.sup.- collector region and a p-type base region. The second electrode plate is bonded partly over the oxide layer and partly with the highly doped n.sup.+ collector region.