Light-receiving semiconductor device with plural buried layers
US5466962A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1994 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Apr 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.