Measurement-based system for modeling and simulation of active semiconductor devices over an extended operating frequency range
US5467291A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1991 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Dec 5, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A modeling system for active semiconductor devices, such as gallium arsenide field effect transistors, for nonlinear (e.g., harmonic balance) circuit simulation. The model enables fast and unambiguous construction (model generation) by explicit calculations applied to raw device response data obtained using an adaptive, automated data acquisition system employed to characterize the device. The automated data acquisition system obtains the data adaptively, taking more data where nonlinearities are most severe and within a calculated, safe operating range of the device. The system converts conventional d.c. and S-parameter data directly into a detailed, device-specific, large-signal model. The system is extremely fast and replaces the need for conventional parameter extraction based on circuit simulation and optimization techniques. The measurement-based model improves large-signal simulation accuracy over an extended operating frequency range, because the model nonlinearities are explicitly constructed from device response data. The model is non quasi-static in that it accounts for frequency dispersion effects. Scaling rules allow devices of various geometries to be simulated from m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.