Condition optimization method for measuring overlay accuracy of pattern
US5468580A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1993 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | Sep 3, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of optimizing measurement conditions of an overlay metrology system without etching process, and this method comprising the steps of forming a first overlay measurement pattern formed of first measurement marks and a second overlay measurement pattern formed of second measurement marks on a substrate, measuring an overlay deviation amount between the first measuring mark and the second measurement mark by the overlay metrology system, calculating an overlay deviation amount difference by subtracting a predetermined overlay deviation amount from respective overlay deviation amounts and adjusting measurement conditions of the overlay metrology system such that a fluctuation of the overlay deviation amount difference is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.