Semiconductor device having trench type capacitors formed completely within an insulating layer
US5468979A · kind A · utility
10Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1994 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | Aug 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device including a silicon substrate, an insulator film formed on said substrate, a transistor provided on said insulator film and a capacitor formed in a trench formed in said insulator film, and a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.