Method for epitaxial growth of semiconductor crystal by using halogenide
US5469806A · kind A · utility
105Cited by
2References
2Claims
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Key dates
| Filing date | Aug 20, 1993 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Aug 20, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl.sub.2, etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H.sub.2 molecules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.