Dielectric thin film and method of manufacturing same
US5470398A · kind A · utility
28Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1991 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Sep 23, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.