Ti-W sputtering target and method for manufacturing same
US5470527A · kind A · utility
28Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1994 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Sep 12, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.