Method of manufacturing a semiconductor device with hydrogen ion intercepting layer
US5470764A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1994 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | May 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
To manufacture a semiconductor device a first insulating oxide film and a second thicker insulating oxide film, which continues to the first insulating oxide film, are formed on a semiconductor substrate. The first and second insulating oxide films are covered by a polysilicon film selectively formed on a patterned nitride layer or formed over the semiconductor substrate. In the second case, a silicon nitride film is formed in the lowermost layer portion of the polysilicon film by implanting nitrogen ions and then applying a heat treatment. The polysilicon and silicon nitride films are patterned for forming first and second polysilicon resistance films on the first and second insulating oxide films, respectively. A first electrode is connected to the first polysilicon resistance film and a second electrode is connected to the second polysilicon resistance film. An insulating protection film formed over the semiconductor substrate covers the first and second polysilicon resistance films and the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.