Thin-film transistor circuit having an amorphous silicon load and a driver transistor and a method of producing the same
US5471070A · kind A · utility
9Cited by
2References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 13, 1995 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Feb 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A thin-film transistor circuit for a logic gate circuit includes: an amorphous silicon layer; a driver transistor having a source region, a drain region, and a channel region, the source, drain, and channel regions being formed in the amorphous silicon layer; and a load device formed in the amorphous silicon layer and made of n.sup.- amorphous silicon, the load device being connected to the driver transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.