Method for selecting a self pulsating semiconductor laser
US5471494A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1994 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Jun 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for selecting a semiconductor laser is provided which contributes to improved productivity of a highly reliable semiconductor laser of prolonged lifetime, and which includes the steps of: (a) measuring highest peak intensity, Ia, and next highest peak intensity, Ib, of an interference fringes pattern of laser radiation of each semiconductor laser using an interferometer to find a damping ratio of visibility of the interference fringes pattern, .gamma.=Ib/Ia; and (b) selecting a semiconductor exhibiting self-pulsation by selecting a semiconductor laser which emits laser radiation whose damping ratio of visibility, .gamma., is 0.5 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.